International Meeting for Future of Electron Devices, 2004.

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International Meeting for Future of Electron Devices, 2004. - 最新文献

Body bias controlled SOI technology with HTI

Pub Date : 2004-07-26 DOI: 10.1109/IMFEDK.2004.1566443 M. Tsujiuchi, Y. Hirano, T. Iwamatsu, T. Ipposhi, S. Maegawa, M. Inuishi, Y. Ohji

Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond

Pub Date : 2004-07-26 DOI: 10.1109/IMFEDK.2004.1566439 T. Yamashita, K. Shiga, T. Hayashi, H. Umeda, H. Oda, T. Eimori, M. Inuishi, Y. Ohji, K. Eriguchi, K. Nakanishi, H. Nakaoka, T. Yamada, M. Nakamura, I. Miyanaga, A. Kajiya, M. Kubota, M. Ogura

Role of boron atoms on fluorine diffusion in pre-amorphized silicon

Pub Date : 2004-07-26 DOI: 10.1109/IMFEDK.2004.1566428 M. Tachi, H. Tsuji, M. Furuhashi, K. Taniguchi

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