Mrs Internet Journal of Nitride Semiconductor Research

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Pub Date : 2002-12-09 DOI: 10.1557/S109257830000034X É. Frayssinet, B. Beaumont, J. Faurie, P. Gibart, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Pub Date : 2002-12-01 DOI: 10.1557/S1092578300000314 A. Petersson, A. Gustafsson, L. Samuelson, Satoru Tanaka, Y. Aoyagi

Low temperature nitridation combined with high temperature buffer annealing for high quality GaN grown by plasma-assisted MBE

Pub Date : 2000-12-01 DOI: 10.1557/S1092578300000107 G. Namkoong, W. Doolittle, Sangbeom Kang, Huang Sa, A. Brown, S. Stock