2021 International Workshop on Advanced Patterning Solutions (IWAPS)

The Discussion of the Typical BEOL Design Rules from 3 nm to 2 nm Logic Process with EUV and High NA EUV Lithography

Pub Date : 2021-12-12 DOI: 10.1109/IWAPS54037.2021.9671251 Qiang Wu, Yanli Li, Xiaona Zhu, Shao-Wei Yu

Scribe Line Self Reference Targets to enable Accurate and Robust After-Etch Overlay Metrology of Active layer

Pub Date : 2021-12-12 DOI: 10.1109/IWAPS54037.2021.9671261 Jimmy Chang, Junjun Zhang, Wei Zhang, Panpan Wang, Xiaofang Zhou, Rui Qin, Silva Hu, Shaowen Qiu, Yunsheng Xia, Giacomo Miceli, Sylvia Yuan, Natalia Drabik, P. Izikson, Giulia Argento, Bas van der Broek, E. Bitincka, Hao Jing, Shaun Dai, Yvon Chai, Yu Liu, Justin Jiang

Lithography vacuum system hydrogen safety while maximizing process productivity

Pub Date : 2021-12-12 DOI: 10.1109/IWAPS54037.2021.9671069 ZHEN YA Ma, S. Davidson, A. Keen, E. David