2005 International Semiconductor Device Research Symposium

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2005 International Semiconductor Device Research Symposium - 最新文献

Accurate MOS Gate Impedance Model for 200MHz-20GHz Frequency Range

Pub Date : 2005-12-07 DOI: 10.1109/ISDRS.2005.1596141 S. Bandi, C. Washburn, P. R. Mukund, J. Kolnik, K. Paradis, S. Howard, J. Burleson

Ultra-low-power HEMT and HBT devices and circuit demonstrations

Pub Date : 2005-12-07 DOI: 10.1109/ISDRS.2005.1596022 M. Lange, A. Cavus, R. Tsai, C. Monier, W. Deal, B. Chan, A. Cox, D. Pascua, R. Sandhu, R. Hsing, B. Poust, J. Kraus, P. Nam, L.J. Lee, D. Li, A. Gutierrez-Aitken, A. Noori, S. Hayashi, M. Goorsky

Monitoring the Self-Heating in a High Frequency GaN HFET

Pub Date : 2005-12-07 DOI: 10.1109/ISDRS.2005.1596077 S. Mcalister, J. Bardwell, S. Haffouz, H. Tang

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