2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 最新文献

1200V-Class HVIC technology with a divided high-side well structure for high-functionality and downsizing of circuits

Pub Date : 2014-06-15 DOI: 10.1109/ISPSD.2014.6856066 A. Jonishi, Masashi Akahane, M. Yamaji, Tomohiro Imai, H. Kanno, Takahide Tanaka, Wataru Tomita, T. Mori, H. Sumida

Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

Pub Date : 2014-06-15 DOI: 10.1109/ISPSD.2014.6856038 M. Ueno, Susumu Yoshimoto, K. Ishihara, M. Okada, Kazuhide Sumiyoshi, H. Hirano, F. Mitsuhashi, Y. Yoshizumi, T. Ishizuka, M. Kiyama

High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module

Pub Date : 2014-06-15 DOI: 10.1109/ISPSD.2014.6856033 H. Kono, K. Takao, Takuma Suzuki, T. Shinohe

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