2009 IEEE International Electron Devices Meeting (IEDM)

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2009 IEEE International Electron Devices Meeting (IEDM) - 最新文献

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

Pub Date : 2009-12-09 DOI: 10.1109/IEDM.2009.5424360 K. Tachi, M. Cassé, D. Jang, C. Dupré, A. Hubert, N. Vulliet, V. Maffini-Alvaro, C. Vizioz, C. Carabasse, V. Delaye, J. Hartmann, G. Ghibaudo, H. Iwai, S. Cristoloveanu, O. Faynot, T. Ernst

Experimental assessment of self-heating in SOI FinFETs

Pub Date : 2009-12-05 DOI: 10.1109/IEDM.2009.5424362 A. Scholten, G. Smit, R. Pijper, L. Tiemeijer, H. Tuinhout, J. van der Steen, A. Mercha, M. Braccioli, D. Klaassen

High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors

Pub Date : 2009-12-01 DOI: 10.1109/IEDM.2009.5424253 P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, J. Jopling, C. Kenyon, S. Lee, M. Liu, S. Lodha, B. Mattis, A. Murthy, L. Neiberg, J. Neirynck, S. Pae, C. Parker, L. Pipes, J. Sebastián, J. Seiple, B. Sell, A. Sharma, S. Sivakumar, B. Song, A. St. Amour, K. Tone, T. Troeger, C. Weber, K. Zhang, Y. Luo, S. Natarajan

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