1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

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1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - 最新文献

Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

Pub Date : 1999-03-23 DOI: 10.1109/RELPHY.1999.761618 R. Thewes, G. Walter, R. Brederlow, C. Schlunder, A. von Schwerin, R. Jurk, C. Linnenbank, G. Lengauer, D. Schmitt-Landsiedel, W. Weber

Significant improvement in electromigration of reflow-sputtered Al-0.5wt%Cu/Nb-liner dual damascene interconnects with low-k organic SOG dielectric

Pub Date : 1999-03-23 DOI: 10.1109/RELPHY.1999.761616 T. Usui, T. Watanabe, S. Ito, M. Hasunuma, M. Kawai, H. Kaneko

The influence of stud bumping stress on device degradation in scaled MOSFETs

Pub Date : 1999-03-23 DOI: 10.1109/RELPHY.1999.761589 N. Shimoyama, K. Machida, M. Shimaya, H. Koizumi, H. Kyuragi

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