2010 Symposium on VLSI Technology

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2010 Symposium on VLSI Technology - 最新文献

Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

Pub Date : 2010-06-15 DOI: 10.1109/VLSIT.2010.5556116 S. Kato, T. Aoyama, T. Onizawa, K. Ikeda, Y. Ohji

Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

Pub Date : 2010-06-15 DOI: 10.1109/VLSIT.2010.5556221 C. Ortolland, S. Sahhaf, V. Srividya, R. Degraeve, K. Saino, C. Kim, M. Gilbert, T. Kauerauf, M. Cho, M. Dehan, T. Schram, M. Togo, N. Horiguchi, G. Groeseneken, S. Biesemans, P. Absil, W. Vandervorst, D. Gealy, T. Hoffmann

Multi-design of architecture, circuit/device/process and package for cost-effective smart mobile devices: An integrated fabless manufacturer (IFM)'s perspective

Pub Date : 2010-06-15 DOI: 10.1109/VLSIT.2010.5556236 G. Yeap

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