2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop

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2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop - 最新文献

In depth analysis of channel length, fin width (down to 10 nm) impacts on Fowler-Nordheim program/erase characteristics of Si-NC SOI FinFlash memories

Pub Date : 2007-09-04 DOI: 10.1109/NVSMW.2007.4290573 L. Perniola, J. Razafindramora, E. Nowak, P. Scheiblin, C. Jahan, M. Gely, C. Vizioz, F. Allain, S. Lombardo, C. Bongiorno, G. Reimbold, F. Boulanger, B. De Salvo, S. Deleonibus

New Punch-through Assisted Hot Holes Programming Mechanism for Reliable SONOS FLASH Memories with Thick Tunnel Oxide

Pub Date : 2007-09-04 DOI: 10.1109/NVSMW.2007.4290595 N. Akil, M. van Duuren, D. Golubović, M. Boutchich, R. van Schaijk

MA BE-SONOS: A Bandgap Engineered SONOS using Metal Gate and Al2O3 Blocking Layer to Overcome Erase Saturation

Pub Date : 2007-09-04 DOI: 10.1109/NVSMW.2007.4290593 S. Lai, H. Lue, Ming-Jui Yang, J. Hsieh, Szu-Yu Wang, Tai-bor Wu, G. Luo, C. Chien, E. Lai, K. Hsieh, R. Liu, Chin-Yuan Lu

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