Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)

Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs

Pub Date : 1998-09-27 DOI: 10.1109/BIPOL.1998.741917 U. Gogineni, G. Niu, S. Mathew, J. Cressler, D. Ahlgren

Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

Pub Date : 1998-09-27 DOI: 10.1109/BIPOL.1998.741877 K. Ohhata, T. Masuda, E. Ohue, K. Washio

Introduction to RF simulation and its application

Pub Date : 1998-09-27 DOI: 10.1109/BIPOL.1998.741883 K. Kundert