High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer

已完结 10 由 Levich 发布于 2026/10/21 21:09:14

DOI:10.1063/5.0315800
作者：Hongcai Yang, Xuelin Yang, Han Yang, Kexin Zhang, Zhenghao Chen, Junkang Wu, Xingyu Fu, Faquan Wu, Xuan Liu, Yuxia Feng, Xing Zhang, Yue Wang, Xiangning Kang, Guangxu Ju, Fujun Xu, Ning Tang, Xinqiang
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：The direct epitaxial growth of GaN on diamond substrates offers a fundamental solution for thermal management in high-power-density GaN electronic devices. However, the amorphous layer and t

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