High-current, high-voltage AlN p–n junction diodes enabled by compositional grading

已完结 10 由 zihan zhao 发布于 2026/10/9 15:04:28

DOI:10.1063/5.0309581
作者：C. E. Qui?ones, P. Reddy, S. Mita, S. Rathkanthiwar, C.-I. Liu, D. Khachariya, R. Kirste, R. Collazo, Z. Sitar
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：AlN p–n junction diodes with low specific ON-resistance (1.6 mΩ cm2), enabling forward current densities gt;1 kA/cm2, and reverse breakdown fields of 8 MV/cm, were demonstrated. The quasi-ve

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