Effect of different metal materials on the formation of Ohmic contacts to p-type SiC: A review

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DOI:10.1016/j.jallcom.2024.178240
作者：Shouwen Yu, Fan Yang, Woo-Chul Yang, Wanfeng Xie
文献类型：期刊论文
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Elsevier

Abstract：As an emerging member of the semiconductor family, the third-generation semiconductor SiC has physical properties such as a wide bandgap, high critical field strength, and high thermal condu

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