Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

已完结 20 由 YU7 发布于 2026/10/26 18:53:58

DOI:10.1038/s41565-023-01399-y
作者：Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong M
文献类型：期刊论文
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Nature

Abstract：Three-dimensional monolithic integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational pow

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