Interface weakening mechanism for femtosecond laser slicing of semi-insulating 4H-SiC wafers

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DOI:10.1016/j.jmatprotec.2026.119482
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.jmatprotec.2026.119482

Elsevier

Abstract：With the ongoing advancement in power electronics and radio-frequency systems toward higher power density, elevated operating frequencies, and increased integration density, there is a corre

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