SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

已完结 10 由 jiusi 发布于 2026/8/14 10:50:51

DOI:10.35848/1347-4065/ac4f79
作者：Keito Aoshima, N. Taoka, M. Horita, J. Suda
文献类型：期刊论文
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IOPscience

Abstract：We present SiO2/GaN interfaces with a low interface state density and a high breakdown electric field. The SiO2 films were deposited by plasma-enhanced atomic layer deposition (ALD) using bi

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