An improved composite JTE technique with increased tolerance to interface charges for 2.8 kV β -Ga2O3 Schottky rectifier

已完结 10 由大炮冲冲冲发布于 2026/8/15 12:23:43

DOI:10.1063/5.0295356
作者：Weibing Hao, Lequan Wang, Guangwei Xu, Zhao Han, Qiuyan Li, Xuanze Zhou, Shibing Long
文献类型：期刊论文
补充材料：只需要正文

American Institute of Physics (AIP)

Abstract：This paper presents an efficient high-k BaTiO3 dielectric assisted junction termination extension (BTO-JTE) technique for vertical β-Ga2O3 Schottky barrier diodes (SBDs), to reduce the sensi

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上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:Institute of Electrical and Electronics Engineers (IEEE)Over 2.5 GW/cm2 Vertical β-Ga?O? Schottky Barrier Diode with High-k Field Plate and Multi-Zone Gradient Rings Assisted JTE