DFT-assisted TCAD simulation of the optoelectronic properties of β-Ga2O3/NiO extreme ultraviolet detector

已取消 20 由大炮冲冲冲发布于 2026/8/25 13:41:50

DOI:10.1016/j.mejo.2026.107362
作者：Pu Zhang,?Xiaochuan Xia,?Hongyun Wang,?Yuhao Xie,?Weiyi Kang,?Hongwei Liang
文献类型：期刊论文
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Elsevier

Abstract：Extreme ultraviolet (EUV) detectors are critical components in fields such as electronics manufacturing and fundamental scientific research. β-Ga2O3 exhibits exceptional radiation tolerance

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