Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs

已完结 10 由青酸发布于 2026/8/4 10:22:07

DOI:10.1016/j.pedc.2025.100083
作者：M. Cioni , G. Giorgino , G. Cappellini , A. Chini , C. Miccoli , M.E. Castagna , A. Abbisogni , A. Contarino , F.A. Pizzardi , S. Smerzi , F. Iucolano
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) u

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