Growth of low resistivity p-type 4H-SiC single crystals by physical vapor transport using a novel crucible structure

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DOI:10.1016/j.vacuum.2025.114557
作者：Wenhao Han, Guanglei Zhong, Xuejian Xie, Xiufang Chen, Wancheng Yu, Xianglong Yang, Li Sun, Chengjin Qin, Zhenxing Fu, Xixi Xiong, Hongyu Shao, X
文献类型：期刊论文
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Elsevier

Abstract：p-Type 4H-SiC single crystal with heavily aluminum doping concentrations is grown by the physical vapor transport (PVT) method using novel crucible structure. After processing, standard p-ty

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