Hysteresis Engineering in 2D Field-Effect Transistors

已完结 10 由 tzn 发布于 2026/8/10 11:37:57

DOI:10.1002/smtd.202502197
作者：Ziyuan Meng, Zhe Sun, Yi Du, Weichang Hao
文献类型：期刊论文
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Wiley

Abstract： Recent advancements in field-effect transistors (FETs) based on atomically thin 2D semiconductors have demonstrated remarkable progress. These materials leverage unique p

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