Influence of substrate atomic symmetry on the epitaxy and rotational domain formation of κ-Ga2O3

已完结 20 由不可一世发布于 2026/8/11 18:10:22

DOI:10.1016/j.jcrysgro.2025.128371
作者：Ha Young Kang,?Jaeheon Jung,?Young Soo Hwang,?Roy B. Chung
文献类型：期刊论文
补充材料：只需要正文

其它数据库

Abstract：This study systematically explores the structural factors influencing κ-phase gallium oxide (κ-Ga2O3) thin film growth and domain formation on non-basal plane substrates. Accordingly, we gre

应助信息

13小时前

立秋

c00af23e956d11f1a7a034735aa3bc31.pdf 已采纳

13小时前

Book学术机器人

2026/8/11 18:10:23 未找到该文献，机器人已退出，请等待人工下载

2026/8/11 18:10:23 Book学术AI机器人收到请求，开始寻找文献

2026/8/11 18:10:23 已向机器人发送请求

13小时前

不可一世发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:ElsevierPrecisely adjusting the interface adhesion of carbon fiber/epoxy composites by regulating the micro-configuration of graphene oxide nanosheets on the fiber surface