Room Temperature Wafer Bonding by Surface Activated ALD- Al2O3

已完结 10 由方小鱼发布于 2026/8/10 16:11:19

DOI:10.1149/05007.0303ECST
作者：Li Yun, Wang Shengkai, Bing Sun, Hudong Chang, Wei Zhao, Xiong Zhang, Honggang Liu
文献类型：期刊论文
补充材料：只需要正文

IOPscience

Abstract：Room-temperature Si/Al2O3 and Al2O3/Si wafer bonding has been achieved successfully using activating wafer surfaces by using O2 plasma and following N2 plasma generated by reactive ion etchi

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