Digitally Controlled Current-Source Active Gate Driver for Improving High-Frequency Performance of SiC MOSFET

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DOI:10.1109/JESTPE.2025.3647206
作者：Xin Li;Yifei Luo;Fei Xiao;Zenan Shi;Binli Liu
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：Silicon carbide (SiC) MOSFETs are widely deployed in high-frequency and high-efficiency power electronics. However, in 300-kVA+ high-power converters utilizing SiC MOSFETs, the fast switchin

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