Thermal oxidation-enabled β-Ga₂O₃/GaN heterojunction for broadband self-powered UV detection.

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DOI:10.1364/OL.578462
作者：Jili Jiang,?Jiangshuai Luo,?Ke Ding,?Shuren Zhou,?Lijuan Ye,?Hong Zhang,?Honglin Li,?Di Pang,?Yan Tang,?Peng Yu,?Wanjun Li
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1364/OL.578462

The Optical Society

Abstract：We report a self-powered broadband UV photodetector based on a β-Ga2O3/GaN heterojunction formed via one-step thermal oxidation. The device exhibits high responsivities of 153.9 mA/W (254 nm

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Thermal oxidation-enabled β-Ga2O3/GaN heterojunction for broadband self-powered UV detection.

Thermal oxidation-enabled β-Ga₂O₃/GaN heterojunction for broadband self-powered UV detection.