Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering

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DOI:10.1021/acs.nanolett.4c05970
作者：Heng Zhang, Jialei Miao, Cheng Zhang, Xinlong Zeng, Tianjiao Zhang, Tingting Chen, Junjie Wu, Kaige Gao, Wei Xu, Xiaowei Zhang, Yuda Zhao
文献类型：期刊论文
补充材料：仅需补充材料

American Chemical Society (ACS)

Abstract：Two-dimensional (2D) material-based p-channel field-effect transistors (FETs) are key elements for the realization of complementary metal-oxide-semiconductor (CMOS) technology. WSe2, as the

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