High-energy proton-radiation tolerance in IGZO synaptic transistors

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DOI:10.1016/j.mssp.2025.110320
作者：Woojin Park, Ojun Kwon , Kyungmin Lee, Seyoung Oh , Tae Jin Yoo , Yongsu Lee , Chang Goo Kang , Byungjin Cho
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.mssp.2025.110320

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Abstract：Exposure to cosmic rays leads to partial degradation of the electronic devices. This study tested the resilience of bare indium-gallium-zinc-oxide synaptic transistors under 33 MeV high-ener

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