Atomic layer deposition of α-Al2O3 from trimethylaluminum and H2O: Effect of process parameters and plasma excitation on structure development

已完结 10 由 jiusi 发布于 2026/9/7 11:22:22

DOI:10.1016/j.jcrysgro.2023.127148
作者：Lauri Aarik,?Carl-Thomas Piller,?Jüri Raud,?Rasmus Talviste,?Indrek J?gi,?Jaan Aarik
文献类型：期刊论文
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Elsevier

Abstract：Aluminum oxide (Al2O3) thin films were deposited from trimethylaluminum (TMA) and H2O on Si substrates and α-Cr2O3 seed layers using thermal and plasma-assisted atomic layer deposition (ALD)

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