GaN/Ga₂O₃ avalanche photodiodes with separate absorption and multiplication structure.

待确认 10 由 hhjj 发布于 2026/9/11 14:57:48

DOI:10.1364/OL.505699
作者：Rui Wang,?Zhenguang Shao,?Kaicheng Xu,?Ting Zhi,?Chunrong Gao,?Junjun Xue,?Jin Wang
文献类型：期刊论文
补充材料：只需要正文

The Optical Society

Abstract：This article proposes a new, to the best of our knowledge, separate absorption and multiplication (SAM) APD based on GaN/β-Ga2O3 heterojunction with high gains. The proposed APD achieved a h

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GaN/Ga2O3 avalanche photodiodes with separate absorption and multiplication structure.

GaN/Ga₂O₃ avalanche photodiodes with separate absorption and multiplication structure.