Selective homoepitaxial growth of buried diamond films with NV centers

已完结 10 由凉鲲发布于 2026/5/8 22:46:23

DOI:10.1016/j.carbon.2026.121307
作者：K. Hayashi , Y. Nakamura , M. Katayama , K. Shimamura , R. Yoshida , K. Kobayashi , K. Ichikawa , T. Yoshikawa , T. Matsumoto , T. Inokuma , S. Yamasa
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：We develop a buried-growth process for NV centers based on microwave plasma chemical vapor deposition that integrates selective etching and growth in a single process. Au/Ti metal masks patt

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