Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio

已完结 10 由 liuyuan 发布于 2026/6/24 15:11:02

DOI:10.1002/smll.202103881
文献类型：期刊论文
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Wiley

Abstract：Morre's law is coming to an end only if the memory industry can keep stuffing the devices with new functionality. Halide perovskite acts as a promising candidate for application in next-gene

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