High gain Ga2O3/GaN avalanche photodetector with separated absorption and multiplication structure

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DOI:10.1063/5.0303222
作者：Yihan Li, Teng Jiao, Wei Chen, Zhao Zhang, Zhe Wang, Zhen Li, Siyuan Cheng, Guoxing Li, Xin Dong, Yuantao Zhang, Baolin Zhang
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：The β-Ga2O3/p-GaN heterojunction avalanche photodetector (APD) with separated absorption and multiplication (SAM) structure was fabricated by metal–organic chemical vapor deposition. Through

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