Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate

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DOI:10.1109/BCICTS53451.2022.10051733
作者：K. Bothe, M. King, Jia Guo, Yueying Liu, S. Sriram, J. Fisher, S. Sheppard, Basim Noori
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：This paper examines the effects of an improved source-connected field plate design used on multiple GaN HEMT gate length nodes. The modified field plate was shown to reduce the parasitic cap

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