Enhancing the Efficiency and Stability of Inverted Perovskite Solar Cells and Modules through Top Interface Modification with N-type Semiconductors

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DOI:10.1002/ange.202416390
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1002/ange.202416390

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Abstract：The interface modification between perovskite and electron transport layer (ETL) plays a crucial role in achieving high performance inverted perovskite photovoltaics (i-PPVs). Herein, non-fu

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