Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

已完结 20 由 Ga2O3 发布于 2026/3/12 12:43:37

DOI:10.35848/1882-0786/ac200b
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.35848/1882-0786/ac200b

IOPscience

Abstract：We report on a refractive-index waveguide AlGaN-based ultraviolet-B band (UV-B) laser diode grown on a sapphire substrate, which achieves a laser oscillation at a low threshold current (I th

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