Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3

已完结 10 由 man 发布于 2026/3/13 16:49:01

DOI:10.1021/acsnano.5c15851
作者：Madani Labed*,?, ,?Kanghee Shin,?, ,?Mohammad Tauquir A. S. Shaikh,?, ,?Jang Hyeok Park,?, ,?Yu Jun Cheon,?, ,?Bo-In Park*,?, ,?Stephen J. Pearton,?, and ,?You Seung Rim*,?
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：Low-resistivity Ohmic contact formation in β-gallium oxide (β-Ga2O3) is crucial for high-efficiency power electronics and deep-ultraviolet (DUV) optoelectronic devices. In this study, we suc

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