Integration of high-κ native oxides of gallium for two-dimensional transistors

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DOI:10.1038/s41928-024-01286-x
作者：Kongyang Yi,?Wen Qin,?Yamin Huang,?Yao Wu,?Shaopeng Feng,?Qiyi Fang,?Xun Cao,?Ya Deng,?Chao Zhu,?Xilu Zou,?Kah-Wee Ang,?Taotao Li,?Xinran Wang,?Jun Lou,?Keji Lai,?Zhili Hu,?Zhuhua Zhang,?Yemin Dong,?K
文献类型：期刊论文
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Nature

Abstract：The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, c

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