Integration of high-κ native oxides of gallium for two-dimensional transistors

已完结 20 由 Jhcuio 发布于 2026/3/13 11:01:26

DOI:10.1038/s41928-024-01286-x
作者：Kongyang Yi, Wen Qin, Yamin Huang, Yao Wu, Shaopeng Feng, Qiyi Fang, Xun Cao, Ya Deng, Chao Zhu, Xilu Zou, Kah-Wee Ang, Taotao Li, Xinran Wa
文献类型：期刊论文
补充材料：仅需补充材料

Nature

Abstract：The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, c

应助信息

1天前

冰敦敦儿

f32fcfe41e8911f1917734735aa3bc31.7z 已采纳

1天前

Book学术机器人

2026/3/13 11:01:26 未找到该文献，机器人已退出，请等待人工下载

2026/3/13 11:01:26 Book学术AI机器人收到请求，开始寻找文献

2026/3/13 11:01:26 已向机器人发送请求

1天前

Jhcuio 发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:ElsevierNomogram for prediction of hepatocellular carcinoma recurrence after liver resection