Stress in Poly-SiC Films Grown by Low Pressure CVD

已完结 10 由 yangcey 发布于 2026/3/13 8:39:10

DOI:10.4028/WWW.SCIENTIFIC.NET/MSF.347-349.477
作者：J. Rodríguez-Viejo,?E. Hurtós,?R. Kressmann,?M. Clavaguera-Mora
文献类型：期刊论文
补充材料：只需要正文

Scientific.Net

Abstract：We present a study of the stress state of polycrystalline 3C-SiC thin films grown on a-SiO 2 /Si(100) substrates by Low Pressure Chemical Vapor Deposition using tetramethylsilane (TMS). Subs

应助信息

1天前

哈利波特的发光魔杖耶

11dc5db41e7611f197b234735aa3bc31.pdf 已采纳

1天前

Book学术机器人

2026/3/13 8:39:10 未找到该文献，机器人已退出，请等待人工下载

2026/3/13 8:39:10 Book学术AI机器人收到请求，开始寻找文献

2026/3/13 8:39:10 已向机器人发送请求

1天前

yangcey 发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:Wolters Kluwer OvidHumanized Citrullinated Histone H3 Monoclonal Antibody Improves Respiratory Function and Attenuates Neutrophil-Mediated Inflammation in a Rodent Model of Smoke Inhalation Lung Injury.