Stress in Poly-SiC Films Grown by Low Pressure CVD

已完结 10 由 yangcey 发布于 2026/3/13 8:39:10

DOI:10.4028/WWW.SCIENTIFIC.NET/MSF.347-349.477
作者：J. Rodríguez-Viejo,?E. Hurtós,?R. Kressmann,?M. Clavaguera-Mora
文献类型：期刊论文
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Scientific.Net

Abstract：We present a study of the stress state of polycrystalline 3C-SiC thin films grown on a-SiO 2 /Si(100) substrates by Low Pressure Chemical Vapor Deposition using tetramethylsilane (TMS). Subs

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