Feasibility Demonstration of GaN on Si Process for R&D and Manufacturing on Existing 200mm Si-Fab

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DOI:10.1109/TSM.2025.3642930
作者：Luisito Livellara;Michele Molgg;Guido Pietrogrande;Selene Colombo;Daria Doria;Ivana Patoprsta;Costanza Adamo;Alessia Azzopardo;Paolo Colpani
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：This work reports the successful integration and processing of hundreds of GaN on Silicon wafer lots devoted to 100V Monolithic GaN power device within a standard 8-inch silicon fab primaril

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