AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

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DOI:10.1063/5.0194083
作者：Jiaxiang Chen, Haitao Du, Haolan Qu, Han Gao, Yitian Gu, Yitai Zhu, Wenbo Ye, Jun Zou, Hongzhi Wang, Xinbo Zou
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：Artificial optoelectronic synaptic transistors have attracted extensive research interest as an essential component for neuromorphic computing systems and brain emulation applications. Howev

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