Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors

已完结 10 由土行孙发布于 2026/2/13 15:42:24

DOI:10.1021/acsaelm.4c01462
作者：Hua Shao,?Tobias Reiter,?Rui Chen*,?Junjie Li*,?Ziyi Hu,?Yayi Wei*,?Ling Li and Lado Filipovic,?
文献类型：期刊论文
补充材料：只需要正文

American Chemical Society (ACS)

Abstract：The loading effect hinders the precise profile control during the selective etching of SiGe in stacked SiGe/Si layers, thereby hindering optimal gate-all-around (GAA) transistor performance.

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