A First-Principles Mechanistic Study of Thermal Selective Etching of SiGe and Si with Fluorine-Containing Etchants

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DOI:10.1021/acs.jpcc.5c01736
作者：Yihan Huang*,??and?,?Monica Sawkar Mathur,?
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：The advancement and scaling of semiconductor devices have driven the development of processes with atomic-scale precision, such as thermal selective etching. Thermal etching utilizes neutral

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