High-temperature operation of group-III nitride high-electron-mobility transistors
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由 予秋 发布于 2026/2/22 12:21:51
DOI:10.1038/s41928-026-01570-y
作者：Yi-Chen Liu, Jacklyn Zhu, John Niroula, Hridibrata Pal, Tomás Palacios, Savannah R. Eisner
文献类型：期刊论文
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作者：Yi-Chen Liu, Jacklyn Zhu, John Niroula, Hridibrata Pal, Tomás Palacios, Savannah R. Eisner
文献类型：期刊论文
补充材料：只需要正文
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