3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

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DOI:10.1063/5.0211183
作者：Jiangbin Wan, Hengyu Wang, Chi Zhang, Yanjun Li, Ce Wang, Haoyuan Cheng, Junze Li, Na Ren, Qing Guo, Kuang Sheng
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β-Ga2O3 HJ

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