Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

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DOI:10.1063/5.0128736
作者：Yuehua Hong,?Xuefeng Zheng,?Yunlong He,?Hao Zhang,?Zi-Jian Yuan,?Xiangchao Zhang,?Fang Zhang,?Yingzhe Wang,?Xiao-Li Lu,?Wei Mao,?X. Ma,?Yi Hao
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：A β-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the reverse leakage and subthreshold leakage current reduction was found at high temperatures from te

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