Computational investigations of the metal/semiconductor NbS2/boron phosphide van der Waals heterostructure: effects of an electric field

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DOI:10.1039/D4DT01454E
作者：Nguyen V. Vinh, Son-Tung Nguyen and Khang D. Pham
文献类型：期刊论文
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Royal Society of Chemistry (RSC)

Abstract：In this work, we design computationally the metal–semiconductor NbS2/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles

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