Interface engineering for minimizing trapped charge density in β-Ga?O? Schottky barrier diodes for high-performance power devices

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DOI:10.1016/j.mtphys.2024.101605
作者：Shivani ,?Atul G. Chakkar ,?Pradeep Kumar ,?Mukesh Kumar
文献类型：期刊论文
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Elsevier

Abstract：Gallium oxide (Ga2O3), with its ultra-wide bandgap and high breakdown voltage, has emerged as a leading candidate for next-generation power devices. The performance and the Baliga figure-of-

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