2.5kV/3.78mΩ?cm2 Low Forward Voltage Vertical β-Ga?O? Schottky Rectifier With Field Plate Assisted Deep Mesa Termination

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DOI:10.1109/LED.2024.3375852
作者：Jiangbin Wan;Hengyu Wang;Ce Wang;Haoyuan Chen;Chi Zhang;Luanxi Zhang;Yanjun Li;Kuang Sheng
文献类型：期刊论文
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Abstract：This work demonstrates vertical $\beta $ -Ga2O3 Schottky Barrier Diodes (SBDs) with a field plate assisted deep mesa termination. The $9~\mu \text{m}$ deep mesa is etched using a self

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