β-Ga2O3 Junction Barrier Schottky Diode with NiO p-well Floating Field Rings

已完结 10 由 hhjj 发布于 2026/4/5 16:02:52

DOI:10.1088/1674-1056/accf69
作者：Qiming He,?Weibing Hao,?Qiuyan Li,?Zhaohong Han,?Song He,?Qi Liu,?Xuanze Zhou,?Guangwei Xu,?Shibing Long
文献类型：期刊论文
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IOPscience

Abstract： Recently, β-Ga2O3, an ultra-wide bandgap semiconductor, has shown great potential to be used for power devices blessed to its unique material properties. For instance, the measured average

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